? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c42a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c42a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p / to-220) 1.13/10 nm/lb.in. weight to-3p 5.5 g to-220 4 g to-263 3 g g = gate d = drain s = source tab = drain ds99157e(12/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 84 m ? pulse test, t 300 s, duty cycle d 2 % polarht tm power mosfet n-channel enhancement mode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density to-3p (ixtq) to-220 (ixtp) g d s (tab) d (tab) g s ixta 42n25p ixtp 42n25p ixtq 42n25p v dss = 250 v i d25 = 42 a r ds(on) 84 m ? ? ? ? ? to-263 (ixta) g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta 42n25p ixtp 42n25p ixtq 42n25p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 12 20 s c iss 2300 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 430 pf c rss 115 pf t d(on) 24 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 ns t d(off) r g = 10 ? (external) 81 ns t f 30 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 17 nc q gd 37 nc r thjc 0.42 c/w r thcs (to-3p) 0.21 c/w (to-220) 0.25 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 42 a i sm repetitive 110 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a 200 ns -di/dt = 100 a/ s q rm v r = 100 v 2.0 c to-3p (ixtq) outline pins: 1 - gate 2 - drain to-220 (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 to-263 (ixta) outline
? 2006 ixys all rights reserved ixta 42n25p ixtp 42n25p ixtq 42n25p fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 0369121518212427 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 8v 9v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 45 0123456789 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 0 0.5 1 1.5 2 2.5 3 3.5 4 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v 5v fig. 4. r ds(on ) norm alize d to 0.5 i d25 value vs. junction tem perature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 42a i d = 21a v gs = 10v fig. 6. drain current vs. case tem perature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alize d to 0.5 i d25 value vs . i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6 0 102030405060708090100110 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixta 42n25p ixtp 42n25p ixtq 42n25p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v g s - volts v ds = 125v i d = 21a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 15 30 45 60 75 90 105 120 0.4 0.6 0.8 1 1.2 1.4 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2006 ixys all rights reserved ixta 42n25p ixtp 42n25p ixtq 42n25p fig. 13. maxim um transient therm al resistance 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 1101001000 pulse width - milliseconds r ( t h ) j c - o c / w
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